FIELD: semiconductor materials, in particular, corpuscular deposition assemblies. SUBSTANCE: method involves controlling deposition temperature and excess of one of source materials in corpuscular beam by means of preliminary detection of power ratio for desorption from each of these materials from substrate surface and generation of corpuscular deposition beam taking into account stochiometric composition excess of material with minimal desorption power. Preferable excess is within range of 3-10%. Production of multilayer composition based on silicon carbide and aluminum nitride involves keeping substrate temperature in range of 900-950 C and running deposition in one stage from target with mobile operation regions, which have at least one source component of composition layer to be deposited. EFFECT: increased field of application, increased reliability of controlling growth of epitaxial structures. 3 cl, 5 tbl
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