HEATING DEVICE FOR THERMOMIGRATION OF LIQUID ZONES IN SILICON WAFER Russian patent published in 2023 - IPC H05B3/00 H05B3/62 H01L21/324 

FIELD: electrical engineering.

SUBSTANCE: invention relates to a heating device in which the method of thermomigration of liquid zones for doping microregions in the volume of silicon in semiconductor wafers can be implemented. Increasing the heating efficiency and ensuring uniformity of the temperature gradient over the entire area of the silicon wafer is the technical result of the invention, which is achieved by the fact that in the heating device the end surfaces of the housing are made in the form of a rigid frame, including end screens, while the silicon wafers are positioned vertically and symmetrically on both sides of a flat resistive heating element in the holes of the cassettes installed parallel to the flat resistive element located inside the housing in its middle part, while the housing contains front screens with holes coaxial to the silicon wafers, with a diameter 10-40 mm greater than the diameter of the silicon wafers.

EFFECT: increasing the heating efficiency and ensuring uniformity of the temperature gradient over the entire area of the silicon wafer.

1 cl, 4 dwg