METHOD OF PRODUCTION OF LANTHANUM-GALLIC SILICATE MONOCRYSTALS Russian patent published in 2006 - IPC C30B15/02 C30B29/34 

Abstract RU 2283905 C1

FIELD: growing lanthanum-gallic silicate monocrystals for making devices on spatial and surface acoustic waves and various piezo-electric and piezo-resonance transducers.

SUBSTANCE: lanthanum-gallic silicate monocrystals (langasite) are grown from charge of the following composition: La3Ga5Si0.88-0.92Ge0.12-0.08O14 (5.387-5.631 wt-% SiO2; 0.404-0.606 wt-% GeO2) in growth unit CRYSTAL-3M including loading the charge into iridium crucible, melting of charge and growth of langasite crystals on preliminarily oriented seed. Use of charge at partial replacement of silicon by germanium reduces oxygen vacancies in langasite crystals improving their quality and making them suitable for manufacture of stable units working at high temperatures.

EFFECT: enhanced efficiency.

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RU 2 283 905 C1

Authors

Kuz'Micheva Galina Mikhajlovna

Dubovskij Aleksandr Borisovich

Domoroshchina Elena Nikolaevna

Semenkovich Galina Vasil'Evna

Tsegleev Andrej Aleksandrovich

Tjunina Elena Aleksandrovna

Dates

2006-09-20Published

2005-07-01Filed