FIELD: growing lanthanum-gallic silicate monocrystals for making devices on spatial and surface acoustic waves and various piezo-electric and piezo-resonance transducers.
SUBSTANCE: lanthanum-gallic silicate monocrystals (langasite) are grown from charge of the following composition: La3Ga5Si0.88-0.92Ge0.12-0.08O14 (5.387-5.631 wt-% SiO2; 0.404-0.606 wt-% GeO2) in growth unit CRYSTAL-3M including loading the charge into iridium crucible, melting of charge and growth of langasite crystals on preliminarily oriented seed. Use of charge at partial replacement of silicon by germanium reduces oxygen vacancies in langasite crystals improving their quality and making them suitable for manufacture of stable units working at high temperatures.
EFFECT: enhanced efficiency.
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Title | Year | Author | Number |
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METHOD FOR GROWING SINGLE CRYSTALS OF LANTHANUM-GALLIUM SILICATE | 1997 |
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Authors
Dates
2006-09-20—Published
2005-07-01—Filed