METHOD OF CUTTING OF SEMICONDUCTOR INGOTS INTO PLATES BY DIAMOND CUT-OFF WHEEL WITH INTERNAL CUTTING EDGE Russian patent published in 1998 - IPC

Abstract RU 2109631 C1

FIELD: production of substrates of semiconductor materials at operations of cutting of ingots of these materials into plates. SUBSTANCE: the method involves attachment and tightening of the wheel on the drum, rotation of the latter about its axis, introduction of ingot in the hole of the cut-off wheel at a distance equal to the sum of the specified thickness of the plate and the cut width, rectilinear motion of ingot onto the cutting edge of the rotating wheel with cutting-off of a plate from ingot at feeding of water lubricant - coolant to the cutting zone, and withdrawal of ingot to the initial position. Prior to cutting-off of each plate, oil magnetic fluid is fed to the cutting edge of the cut-off wheel with simultaneous superposition of magnetic field on it. EFFECT: enhanced efficiency. 4 dwg

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RU 2 109 631 C1

Authors

Khudobin L.V.

Krupennikov O.G.

Dates

1998-04-27Published

1995-06-06Filed