FIELD: technology of manufacturing silicon substrate; applicable in operations of cutting of silicon single crystals into wafers in electronic industry. SUBSTANCE: method includes supply to cutting zone of lubricant-coolant symmetrically to point of touching of single crystal by edge of cutting wheel in direction at angle of 70-80 deg to tangent of point of contact of lubricant-coolant jet with cutting wheel edge from lubricant-coolant sources with diameter of outlet hole d = 1.5-3 at distance of (2.5-4)d from point of touching of jet with edge and at distance of (1.1-1.4)D from axis of lubricant-coolant sources to point of touching of single crystals by cutting wheel edge at beginning of cutting, where D is diameter of single crystal. Flow rate of lubricant-coolant is taken equal to liquid quantity transported per time unit in intergranular space of cutting wheel edge in compliance with formula given in the invention description. EFFECT: higher efficiency. 1 tbl
