METHOD FOR CUTTING SEMICONDUCTING INGOTS INTO PLATES Russian patent published in 1998 - IPC

FIELD: manufacture of substrates from semiconducting materials. SUBSTANCE: method involves mounting cutting diamond wheel with inner cutting edge and bowl-type grinding wheel in axial alignment one with respect to another and imparting rotation to them; introducing ingot into cutting diamond wheel and feeding grinding wheel to working position; moving ingot in radial direction to cutting edge of diamond wheel and grinding ingot end with following cutting off of plate from it. Grinding wheel granularity is selected such that thickness of disturbed layer of ground side of plate does not exceed residual imperfection upon cutting. EFFECT: increased efficiency, simplified method and improved quality of plates. 2 dwg, 1 tbl