FIELD: production of aluminum nitride films. SUBSTANCE: method includes spraying of aluminum in nitrogen atmosphere with the aid of vacuum arc discharge in the form of glow or high-frequency discharge. In application of film on aluminum substrate, prior to initiation of vacuum arc discharge, glow discharge is initiated in nitrogen atmosphere for cleaning of substrate surface and formation of intermediate transition layer of aluminum nitride. EFFECT: provision of additional nitrogen ionization and higher flux of nitrogen ions to substrate. 5 cl, 1 dwg
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