FIELD: metallurgy.
SUBSTANCE: pre-cleaning of a substrate by ionic bombardment in a glow discharge in argon atmosphere is performed at the temperature of 45-50°C during 10-15 minutes. A submicron film is formed of two components: TiN and Ti in vacuum by electric-arc sputtering of a titanium target in reaction gas-nitrogen atmosphere. The obtained submicron film is subject to bombardment with nitrogen ions at displacement on the substrate of up to - 600 V and temperature of 50-60°C during 15-20 minutes.
EFFECT: invention allows changing the content of titanium in relation to titanium nitride in the film not during the process, but after sputtering; as a result, formation of a coating based on titanium nitride of stoichiometric composition and improvement of physical and mechanical properties of items is achieved.
2 dwg
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