MELTER FOR CRYSTAL GROWING FROM MELT Russian patent published in 1998 - IPC

FIELD: metallurgy of semiconductor materials; may be used in design of melting devices for melt growth of crystals, mainly, from silicon. SUBSTANCE: method consists of quartz crucible installed inside graphite support, and a layer of silicon carbide powder placed in gap between crucible and support. In this case, the layer of silicon carbide powder locally varies in thickness in compliance with crucible wall height, and graphite support is all-graphite. EFFECT: provision of uniform heating of melted material and excluded deformation of quartz crucible and graphite support. 3 cl