MELTING DEVICE FOR GROWING SILICON MONO-CRYSTALS FROM MELT Russian patent published in 2004 - IPC

Abstract RU 2241080 C1

FIELD: electronics.

SUBSTANCE: device has quartz crucible placed on graphite substrate rigidly fixed on rod. Substrate is made combined in form of upper and lower disks and shell, mounted coaxially to each other, while upper disk having greater diameter than lower disk is made with possible fixing relatively to lower disk and crucible with shell. Lower disk is fixed on rod, and shell is formed and fixed around crucible. As material for shell foil of thin-layered graphite may be used.

EFFECT: higher quality, higher effectiveness, higher safety.

2 cl, 1 dwg

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RU 2 241 080 C1

Authors

Alekseev S.V.

Batashov M.V.

Makeev Kh.I.

Makeev M.Kh.

Dates

2004-11-27Published

2003-06-17Filed