GROWING TECHNIQUE OF SINGLE-CRYSTAL SILICON FROM MELT Russian patent published in 2008 - IPC C30B15/10 C30B29/06 

FIELD: metallurgy, crystals.

SUBSTANCE: invention concerns field of semiconducting materials metallurgy and can be used mainly at receiving of substances crystals with fusion temperature, increasing quartz softening temperature, for instance at growing of single-crystal silicon by means of Czochralski growth technique. Method includes location of quartz crucible in compound support, formed by cylinder course and disk, feed stock charging into quartz crucible, mounting of crucible with support into furnace, charging melting, single-crystal seed introduction and single crystal withdrawal from the melt. In particular technique cylinder course is implemented in the form of glass, bottom of which is formed by means of location at support disk layer of the same material, from which it is made cylinder part of course, crucible is located in course with ability of sliding, crucible is installed into furnace in a way that crucible bottom is in area of maximal heating. Melting mode is specified, providing reliable softening of spherical bottom-most part of quartz crucible, crucible is held till melting of charging material, then it is pulled down inside of furnace in position of growing process start and there is fixed single crystal growing mode.

EFFECT: decreasing of cost price of single-crystal silicon at the expense of crucible durability increasing and ability of it multiple additional charging by initial raw materials.

4 cl, 3 dwg