FIELD: micromechanical gyroscopic equipment. SUBSTANCE: proposed pickup is built on field-effect transistor with mobile gate to increase sensitivity, steepness, noise immunity in case of miniaturized make. Gate of field-effect transistor is located on one of elements of structure of pickup and source, channel and drain are positioned on other element mobile relative to first one. Description presents various variants of design of pickup. EFFECT: increased sensitivity, steepness and noise immunity of pickup. 13 cl, 6 dwg
Title | Year | Author | Number |
---|---|---|---|
MICROMECHANICAL VIBRATORY GYROSCOPE (VERSIONS) | 1995 |
|
RU2085849C1 |
MICROMECHANICAL VIBRATORY GYROSCOPE (VERSIONS) | 1995 |
|
RU2085848C1 |
MICRO-MECHANICAL VIBRATORY GYRO | 2000 |
|
RU2178548C1 |
METHOD FOR MANUFACTURING A GALLIUM NITRIDE POWER FIELD-EFFECT TRANSISTOR | 2017 |
|
RU2668635C1 |
VERTICAL FIELD TRANSISTOR | 2009 |
|
RU2402105C1 |
FIELD-EFFECT TRANSISTOR | 0 |
|
SU1103762A1 |
ADAPTIVE SENSOR BASED ON SENSITIVE FIELD DEVICE | 2012 |
|
RU2511203C2 |
METHOD FOR PRODUCTION OF TUNNELLING MULTI-GATE FIELD NANOTRANSISTOR WITH SCHOTTKY CONTACTS | 2018 |
|
RU2717157C2 |
FIELD-EFFECT METAL-INSULATOR-SEMICONDUCTOR TRANSISTOR | 1994 |
|
RU2130668C1 |
SEMICONDUCTOR DEVICE | 2003 |
|
RU2278448C2 |
Authors
Dates
1998-08-20—Published
1997-07-04—Filed