FIELD: microelectronics. SUBSTANCE: transistor has insulating substrate carrying on its surface source and drain regions provided with electrodes and made of metallic-conductivity material; semiconductor sub-gate region arranged between source and drain regions; sub-gate insulation layer with gate electrode on sub-gate region surface. Transistor also has additional heavily doped semiconductor region with electrode on insulating substrate surface which abuts against sub-gate region. EFFECT: improved speed and increased operating temperature of transistor. 3 cl, 3 dwg
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