METHOD FOR MANUFACTURING A GALLIUM NITRIDE POWER FIELD-EFFECT TRANSISTOR Russian patent published in 2018 - IPC H01L21/335 

FIELD: instrumentation.

SUBSTANCE: invention relates to electronic engineering and intended to manufacture discrete devices and microwave noise integrated circuits with the help of HEMT fieldistors. According to the invention, thin conducting coatings are not applied on resist masks, but under them, that is directly on the working surface of the active region of the semiconductor structure, second level masks are further formed from electron resists and by the method of electronic lithography the expanded Schottky field shutter heads are formed, then the conducting coatings in the open windows of the second level masks are removed, the barrier metallization is sprayed, by the method of lift-off lithography of masks of the second level electron resists the field shutter heads or other structural elements are formed and the conducting coatings from open surface patches are removed. If it is necessary to form cavities under the fields of field shutter heads, the first level masks are selectively removed, passivation of the channel surface between the drain and source is performed with a dielectric layer in such a way, that air cavities are formed under the field heads, then windows are opened in the dielectric above the contacts, metallization of the following levels and substrates is carried out, after that the substrate is divided into separate crystals.

EFFECT: technical result is higher quality of the electron resist removal in the windows of the resist mask, providing an even border of the resist masks and given linear sizes of the gate slot.

1 cl, 1 dwg