VERTICAL FIELD TRANSISTOR Russian patent published in 2010 - IPC H01L29/772 

FIELD: electricity.

SUBSTANCE: in vertical field transistor containing the source connection, ohmic contact to the source, source, vertical conducting channels, gate made in the form of metal band, sink, the first and the second dielectric layers located on upper and lower surfaces of metal band and adjacent to side surfaces of vertical conducting channels, and substrate, to lower sink surface there in series applied is layer of ohmic contact, contact layer of ductile metal and damping layer of ductile metal, to lower surface of non-perforated end of metal band there in series applied is the first process layer, the second process layer and support for non-perforated end of metal band; substrate is made from heat-conducting dielectric material; to upper side of substrate there applied are the first and the second contact platforms which are galvanically connected to lower surfaces of damping layer and metal support, and all the transistor elements arranged on dielectric substrate, except the source connection, are enveloped with protective dielectric filling.

EFFECT: invention allows increasing output power of transistor and improving reliability and its life time.

8 cl, 3 dwg