MAGNETORESISTIVE ELEMENT AND PROCESS OF ITS MANUFACTURE Russian patent published in 1999 - IPC

FIELD: measurement technology. SUBSTANCE: magnetoresistive elements are designed to be used as transducers of magnetic field or strain-gauge transducers. Magnetoresistive element includes insulating substrate and film made from magnetoresistive alloy deposited on it in the form of structure composed of four meanders connected according to bridge circuit. Strips of meanders forming adjacent arms of bridge are mutually perpendicular. Thickness of film is not less than 60 nm and its axis of slight magnetization is fixed on element surface in one direction. Axis of slight magnetization of magnetoresistive film forms angle of 90 degrees as minimum with longitudinal axis of meander strips. Films of magnetoresistive alloy are deposited in vacuum not worse than 6.6 10^-5 Pa by laser from rotating target on to insulating substrate positioned in magnetic field. Structure is formed with the use of ion-plasma etching through photoresistive mask in accordance with specified direction of axis of slight magnetization of manufactured film. EFFECT: enhanced sensitivity in wide range thanks to improved quality of magnetoresistive film, diminished field of anisotropy and increased magnetoresistive ratio. 5 cl