FIELD: microelectronics, and can be used at formation of structures by the method of negative lithography. SUBSTANCE: positive electronoresist is applied onto the substance, exposure of the pattern, development are performed, an additional layer of material is applied and the resist is removed; after development the elements formed in the resist are irradiated by an electron beam at an energy of 1 to 5 KeV with a dose equal to 2 to 10 resist sensitives; after that the resist is removed to the depth of the layer radiated by development. EFFECT: facilitated procedure.
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