SELECTIVE GAS SENSOR Russian patent published in 1999 - IPC

Abstract RU 2137115 C1

FIELD: gas detection techniques. SUBSTANCE: invention relates to gas sensors with semiconductor sensitive element for rapidly monitoring air ingredients. Sensor contains support with resistive heating layer on its one side and semiconductor oxide film alloyed with other metal oxides on the other. Oxide of principal layer is oxide of metal from valence group not below than that of gas to be detected. Working temperature and equivalent quality factor are calculated from regression dependencies given in formula of invention. EFFECT: increased selectivity due to matching of sensitive element parameters and detection mode with molecular weight and valence of gas being detected. 3 dwg

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RU 2 137 115 C1

Authors

Davydov V.F.

Shcherbakov A.S.

Mashkov A.S.

Batyrev Ju.P.

Shalaev V.S.

Chirkov A.M.

Dates

1999-09-10Published

1997-12-26Filed