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Application

98105828/12, 1998-03-19

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Start date

1998-03-19

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Actual filing date

1998-03-19

(45)

Published

1999-11-20

(72)

Inventor

Prokhorov A.M.Petrov G.N.Ljashchenko B.G.Garusov Ju.V.Shevchenko V.G.

(73)

Holder

Zakrytoe Aktsionernoe Obshchestvo Nt"

METHOD FOR THERMOBARIC BAKING OF COMPLEX RADIATION FLAWS IN NEUTRON TRANSMUTATION DOPED CRYSTALLINE SEMICONDUCTOR MATERIALS Russian patent published in 1999 - IPC

Abstract RU 2141544 C1

FIELD: nuclear engineering. SUBSTANCE: ingot of polycrystalline or single-crystalline semiconductor material is placed in high-pressure vessel connected to hydraulic compressor unit, bismuth or bismuth alloy capsule is potter and crystallized around semiconductor material ingot with capsule wall size and ingot diameter maintained approximately equal, high-pressure vessels are placed in irradiation channel of neutron transmutation unit, pressure is raised to value at which polymorphic transforms occur in bismuth or bismuth alloy, vessel temperature is raised to specified baking point, ingot of semiconductor material is subjected to neutron transmutation doping according to specified time and dose schedule, then mentioned operations are conducted in reverse sequence; for final operation, high-pressure vessel is subjected to radiation inspection, decontaminated, bismuth or bismuth alloy is fused, surface layer is removed from ingot, and the latter is cut. EFFECT: provision for destroying complex flaws occurring in the course of neutron activation. 1 ex

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RU 2 141 544 C1

Authors

Prokhorov A.M.

Petrov G.N.

Ljashchenko B.G.

Garusov Ju.V.

Shevchenko V.G.

Dates

1999-11-20—Published

1998-03-19—Filed

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