FIELD: manufacture of microelectronic devices. SUBSTANCE: plate is dipped into liquid bath and is separated from liquid. Bath contains aqueous solution of HF with concentration between 0.001 up to 50.0%. Desensitization of silicon surface takes place immediately after termination of drying process thanks to addition of gas mixture O2/O3. Cleaning occurs as ozone is fed into solution on surface of liquid owing to addition of gas mixture carrying O2/O3 during drying process. EFFECT: effective drying of substrate with simultaneous cleaning of surface by simple procedure. 25 cl, 5 dwg
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