METHOD FOR DEEP CLEANING SURFACE OF SILICON WAFERS Russian patent published in 2021 - IPC H01L21/306 

FIELD: instrumentation.

SUBSTANCE: invention relates to the field of instrumentation and can be used in the manufacture of silicon sensitive elements of micromechanical sensors, such as accelerometers, angular velocity sensors, pressure, etc. The essence of the invention: in the method for surface treatment of a monocrystalline silicon wafer oriented along the Si (100) plane, including cleaning said surface in an HF solution, in an aqueous ammonia-peroxide solution, rinsing with deionized water and drying under normal conditions, according to the method before cleaning the wafer surface in In an HF solution, the surface of the silicon wafer is oxidized at a temperature of (950-1150)°C for at least 90 minutes, after which the wafer surface is sequentially cleaned in an HF solution, an aqueous ammonia-peroxide solution, followed by rinsing with deionized water and drying under normal conditions.

EFFECT: invention reduces the temperature error and increasing the temperature range of measurements of micromechanical sensors by reducing surface leakage currents by removing atomic metal impurities in the near-surface layers of silicon wafers.

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