METHOD REALIZING INTERNAL PROPORTIONAL AMPLIFICATION IN SEMICONDUCTOR PARTICLE AND RADIATION DETECTOR AND GEAR FOR ITS IMPLEMENTATION Russian patent published in 1999 - IPC

FIELD: semiconductor devices, solution of number of fundamental physical problems including investigation and recording of uncommon events, coordinate measurements in high-energy physics. SUBSTANCE: value of field intensity needed for avalanche multiplication of carriers is achieved in detector by selection of relationship of geometric parameters of detector. Geometric parameters of detector are chosen in this case from relationship , where E is intensity of field in working region; V is voltage applied to detector; Vd is depletion voltage; L is thickness of working region; d is width of strip; S is distance between strips, y is distance to strip. Method is realized in planar semiconductor particle and radiation detector having working region, two electrodes, one of them being made in the form of strips and junction whose thickness is less than width of strip formed under each strip. EFFECT: reduced energy threshold of registration without noticeable rise of voltage applied to detector. 2 cl, 2 dwg