AVALANCHE PHOTODETECTOR Russian patent published in 1999 - IPC

FIELD: microelectronics. SUBSTANCE: avalanche photodetector used for recording radiation in various bands of spectrum and charged particles has semiconductor substrate, buffer layer, field-effect electrode, and regions formed on substrate surface under buffer layer in which concentration of doping impurities is higher than in substrate; these regions are relatively isolated by means of depressions made between them which may be filled with light-insulating material; buffer layers above and between these regions may differ in electrical characteristics. Free surface of substrate is adjacent to additional layer of high charge carrier concentration. EFFECT: improved sensitivity to incident radiation due to more compact design. 4 cl, 1 dwg