FIELD: recording weak fluxes of light quanta, gamma rays, and nuclear particles. SUBSTANCE: semiconductor surface is covered with at least two separate semiconductor layers whose polarity of conductivity is reverse to that of substrate. Substrate-isolated semiconductor region is formed in each semiconductor layer, its polarity of conductivity being reverse to that of semiconductor layers. Mentioned semiconductor regions are interconnected by means of common conducting electrode isolated both from semiconductor layers and from substrate by insulating layer formed in gaps between semiconductor regions. EFFECT: enhanced sensitivity and improved signal-to-noise ratio of detector. 1 cl, 1 dwg
Title | Year | Author | Number |
---|---|---|---|
SEMICONDUCTOR AVALANCHE DETECTOR | 2013 |
|
RU2528107C1 |
GA-AS BASE SEMICONDUCTOR CHARGE-PARTICLE DETECTOR | 1993 |
|
RU2097874C1 |
SEMICONDUCTOR AVALANCHE DETECTOR | 2023 |
|
RU2814514C1 |
SEMICONDUCTOR AVALANCHE PHOTODETECTOR | 2017 |
|
RU2650417C1 |
AVALANCHE OPTICAL DETECTOR | 0 |
|
SU1702831A1 |
GRAPHENE-BASED TUNNEL FIELD EFFECT TRANSISTOR | 2014 |
|
RU2554694C1 |
CREEPING DISCHARGE TUBE | 1987 |
|
SU1461290A1 |
PROCESS OF MANUFACTURE OF SUBMICRON TUBULAR METAL REPLICAS WITH TRACK MEMBRANES | 1998 |
|
RU2156328C1 |
AVALANCHE DETECTOR | 1996 |
|
RU2102820C1 |
EXPLODING EMISSION DIODE | 1986 |
|
SU1438511A1 |
Authors
Dates
2003-09-20—Published
2002-03-22—Filed