SEMICONDUCTOR MICROCHANNEL DETECTOR WITH INTERNALLY AMPLIFIED SIGNAL Russian patent published in 2003 - IPC

Abstract RU 2212733 C1

FIELD: recording weak fluxes of light quanta, gamma rays, and nuclear particles. SUBSTANCE: semiconductor surface is covered with at least two separate semiconductor layers whose polarity of conductivity is reverse to that of substrate. Substrate-isolated semiconductor region is formed in each semiconductor layer, its polarity of conductivity being reverse to that of semiconductor layers. Mentioned semiconductor regions are interconnected by means of common conducting electrode isolated both from semiconductor layers and from substrate by insulating layer formed in gaps between semiconductor regions. EFFECT: enhanced sensitivity and improved signal-to-noise ratio of detector. 1 cl, 1 dwg

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RU 2 212 733 C1

Authors

Sadygov Z.Ja.-O.

Zheleznykh I.M.

Bokova T.Ju.

Stojkov A.V.

Musienko Ju.V.

Dates

2003-09-20Published

2002-03-22Filed