MAGNETIC SEMICONDUCTOR MATERIAL Russian patent published in 2012 - IPC C30B29/40 H01F1/01 C01G15/00 C01G30/00 

FIELD: chemistry.

SUBSTANCE: invention relates to manganese- and zinc-doped indium antimonides which can be used in spintronics, where electron spin is used as an active element for storing and transmitting information, forming integrated and microfunctional circuits, as well as designing novel magneto-optoelectronic devices. A magnetic semiconductor material is disclosed, which contains indium, antimony, manganese and zinc, and is indium antimonide InSb doped with manganese in amount of 0.12-0.19 wt % Mn and zinc in amount of 0.71-1.12 wt % Zn, and has the formula InSb<Mn,Zn>.

EFFECT: invention enables to obtain material which is characterised by Curie point of 320 K and combines semiconductor and ferromagnetic properties.

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