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(19)

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2 400 850

(13)

(51)

IPC

H01F1/01(2006-01-01)

C01G37/00(2006-01-01)

C04B35/547(2006-01-01)

C01G3/00(2006-01-01)

C01G15/00(2006-01-01)

(21) (22)

Application

2009115621/15, 2009-04-27

(24)

Start date

2009-04-27

(22)

Actual filing date

2009-04-27

(45)

Published

2010-09-27

(72)

Inventor

Koneshova Tat'Jana IgorevnaTishchenko Ehduard Afanas'Evich

(73)

Holder

Uchrezhdenie Rossijskoj Akademii Nauk Institut Obshchej I Neorganicheskoj Khimii Im. N.S. Kurnakova Ran Ran)

MAGNETIC SEMICONDUCTOR MATERIAL Russian patent published in 2010 - IPC H01F1/01 C01G37/00 C04B35/547 C01G3/00 C01G15/00

Abstract RU 2400850 C1

FIELD: physics.

SUBSTANCE: magnetic semiconductor material is a compound of chromium, gallium and copper selenide having chemical formula CuGaCr₂Se₅ and characterised by Curie point of 318K.

EFFECT: invention enables to obtain material with Curie point higher than room temperature, having ferromagnetic and semiconductor properties.

1 dwg, 2 ex

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RU 2 400 850 C1

Authors

Koneshova Tat'Jana Igorevna

Tishchenko Ehduard Afanas'Evich

Dates

2010-09-27—Published

2009-04-27—Filed