FIELD: inorganic chemistry; manganese-doped triple-bond germanium and cadmium arsenides.
SUBSTANCE: proposed material that may be found useful in spintronics as active element for data storage and transfer, production of integrated and functional circuits, and for designing new magneto-optical electronic devices is characterized in Curie temperature of 329 - 355 K as well as in unique combination of semiconductor and ferromagnetic properties which makes it promising for wide application incorporates germanium, cadmium, arsenic, and manganese; it is essentially triple bond of germanium and cadmium arsenide doped with manganese in the amount of 1-6 mass percent and meets formula CdGeAs2<Mn>; in this triple bond both cadmium and germanium atoms are replaced by manganese atoms.
EFFECT: enlarged functional capabilities.
1 cl, 2 dwg, 1 tbl, 3 ex
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