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2 392 680

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(51)

IPC

H01F1/40(2006-01-01)

(21) (22)

Application

2007105127/02, 2007-02-12

(24)

Start date

2007-02-12

(22)

Actual filing date

2007-02-12

(45)

Published

2010-06-20

(72)

Inventor

Nipan Georgij DonatovichKetsko Valerij AleksandrovichKol'Tsova Tat'Jana NikolaevnaStognij Aleksandr IvanovichJanushkevich Kazimir IosifovichPan'Kov Vladimir Vasil'EvichKuznetsov Nikolaj Timofeevich

(73)

Holder

Institut Obshchej I Neorganicheskoj Khimii Im. N.S. Kurnakova Rossijskoj Akademii Nauk Ran)

SEMICONDUCTOR FERRIMAGNETIC MATERIAL Russian patent published in 2010 - IPC H01F1/40

Abstract RU 2392680 C2

FIELD: physics, semiconductors.

SUBSTANCE: invention relates to semiconductor materials based on metal oxides, particularly to homogeneous polycrystalline materials based on complex oxides of the class of diluted magnetic semiconductors. The invention can be used in spintronics. The semiconductor ferromagnetic material has paramagnetic state transition temperature T_k=470-520 K and is a solid solution oxides of zinc, aluminium or gallium, magnesium and iron having formula (ZnAl₂O₄)_1-x(MgFe₂O₄)_x or (ZnGa₂O₄)_1-x(MgFe₂O₄)_x, where x=0.01-0.10.

EFFECT: obtaining thermally stable material.

6 dwg, 3 tbl, 4 ex

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RU 2 392 680 C2

Authors

Nipan Georgij Donatovich

Ketsko Valerij Aleksandrovich

Kol'Tsova Tat'Jana Nikolaevna

Stognij Aleksandr Ivanovich

Janushkevich Kazimir Iosifovich

Pan'Kov Vladimir Vasil'Evich

Kuznetsov Nikolaj Timofeevich

Dates

2010-06-20—Published

2007-02-12—Filed