FIELD: technological equipment for growing crystals under microgravitation conditions. SUBSTANCE: ampoule for growing crystals has casing where spring- loaded piston fitted with travel limiter is arranged. Piston is in contact with starting agent for growing crystals; casing is made from material which is nonwettable by melt of starting agent and piston is made from material wettable by this melt. EFFECT: avoidance of contact of growing crystal with walls of ampoule; improved quality of growing crystals. 3 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| CRYSTAL PRODUCTION PROCESS | 1998 |
|
RU2153030C2 |
| CONTAINER FOR GROWING CRYSTALS | 1996 |
|
RU2091515C1 |
| METHOD OF GROWING CRYSTALS | 1996 |
|
RU2092629C1 |
| DEVICE FOR SILICON SINGLE CRYSTALS GROWING BY CHOKHRALSKY METHOD | 2007 |
|
RU2355834C1 |
| DEVICE FOR GROWING OF SINGLE CRYSTALS OF SILICON BY CZOCHRALSKI METHOD | 2008 |
|
RU2382121C1 |
| METHOD FOR PRODUCING THERMOELECTRIC MATERIALS ON THE BASIS OF Bi(TeSe) HAVING ELECTRON CONDUCTIVITY TYPE | 1998 |
|
RU2157020C2 |
| METHOD OF GROWING MONOCRYSTALS-SCINTILLATORS BASED ON SODIUM IODIDE OR CAESIUM IODIDE AND DEVICE FOR IMPLEMENTING METHOD | 2006 |
|
RU2338815C2 |
| METHOD FOR GROWING GERMANIUM OR SILICON SINGLE CRYSTALS AND A DEVICE FOR ITS IMPLEMENTATION | 2022 |
|
RU2791643C1 |
| AMPOULE FOR CRYSTAL GROWING UNDER MICRO GRAVITATION | 2014 |
|
RU2547758C1 |
| METHOD OF GROWING SEMICONDUCTOR CRYSTALS | 1990 |
|
RU2023770C1 |
