DEVICE FOR GROWING OF SINGLE CRYSTALS OF SILICON BY CZOCHRALSKI METHOD Russian patent published in 2010 - IPC C30B15/14 C30B29/06 

FIELD: metallurgy.

SUBSTANCE: device includes chamber 1 of single crystal growing 22 with located in it capsule 4 for receiving of melt, extending method from melt of silicon monocrystal and screening device, located co-axial to grown single crystal 22, implemented in the form of double screen - internal 15 and external 16, herewith external screen 16 allows shape, repeating or close to shape of quartz crucible 4, and internal 15 - shape of truncated cone, directed by minor basis to melt. Screening device is outfitted by the second tapered screen 9, located inside the first tapered screen 15 and co-axial to it, with a gap between them for providing of ability of gas passing through clearance to walls of chamber, top edge of the second tapered screen 9 is connected to the ring 10, under which it is located water-cooled screen 12, inner cavity of which is connected by pipes for feeding and withdrawal of water, and screen 16, repeating shape of crucible, is connected to side cylindrical heat insulating screen. Water-cooled screen 12 is implemented in the form of hollow cylinder, allowing in walls cavity of rectangular section, which is outfitted by pipes for feeding and withdrawal of water. Top part of side water-cooled screen is implemented in the form of set of rings 20. Space between the first tapered screen 15 and screen 16, repeating shape of crucible, is filled by heat insulating material 17, for instance graphitic felting. Side heat insulating screen is outfitted by openings for gas passing to side walls of growing chamber.

EFFECT: increasing of structural perfection of grown dislocation-free single crystal of silicon at simultaneous reduction of power inputs for its manufacturing.

6 cl, 1 dwg