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2 092 629

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C1

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IPC

(21) (22)

Application

96108211/25, 1996-04-24

(22)

Actual filing date

1996-04-24

(45)

Published

1997-10-10

(72)

Inventor

Mil'Vidskij M.G.Verezub N.A.Kopeliovich Eh.S.Prostomolotov A.I.Rakov V.V.

(73)

Holder

Institut Khimicheskikh Problem Mikroehlektroniki

METHOD OF GROWING CRYSTALS Russian patent published in 1997 - IPC

Abstract RU 2092629 C1

FIELD: crystal growing. SUBSTANCE: method of growing artificial crystals at zero gravity includes applying film (0.15-1.0 mm) on initial ingot, melting point of film material being lower than that of substance of crystal to be grown. Melt of the film material wets ingot but does not mix with crystal melt. EFFECT: increased crystal homogeneity due to retaining surface film during crystal growing process. 2 cl

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RU 2 092 629 C1

Authors

Mil'Vidskij M.G.

Verezub N.A.

Kopeliovich Eh.S.

Prostomolotov A.I.

Rakov V.V.

Dates

1997-10-10—Published

1996-04-24—Filed

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