METHOD OF GROWING SEMICONDUCTOR CRYSTALS Russian patent published in 1994 - IPC

FIELD: chemistry and physics; methods for producing A³B⁵ compounds. SUBSTANCE: this method prescribes additionally introducing transport agent into ampule and running process at source temperature by 100 to 600 C lower compound melting point. Seed crystal temperature should be by 5 to 100 C lower than source temperature. Highly volatile component pressure should be maintained within range up to 1 atm from equilibrium value at seed crystal temperature. Disclosed method allows producing A³B⁵ crystals about 40 mm in diameter and about 17 mm in height. Crystals have regular geometrical shape and prescribed crystallographic orientation. EFFECT: high-quality crystals. 2 cl, 1 dwg, 1 tbl