METHOD FOR PRODUCTION OF TOPOLOGY ON FUNCTIONAL LAYER SURFACE Russian patent published in 2000 - IPC

FIELD: electronics. SUBSTANCE: method involves production of X-ray resistant layer which height is not less than maximal height of topology structures of functional layer. Exposition is achieved by X-rays through X-ray pattern. Development of hidden image starts simultaneously with exposition. Then method involves drying of topology-covered X-ray resistive layer and production of topology on surface of functional layer simultaneously with its production, which is produced directly over X-ray resistive layer topology-covered surface. Then method involves destruction of X-ray resistive layer and removal of X-ray resistive residuals from functional layer. EFFECT: resolution of functional layer structures is same as resolution of structures of X-ray resistive layer under X-ray exposition. 2 cl