METHOD FOR MANUFACTURE OF LITOGRAPHIC MASK FOR LIGA-TECHNOLOGY Russian patent published in 2009 - IPC G03F7/00 

FIELD: physics.

SUBSTANCE: application: for manufacture of lithographic mask. Resistive mask is formed by means of X-ray lithography on working surface of bearing membrane or processed substrate, which are blanks for lithographic mask and are made of materials with low atomic weight, and processes of electroplating metals with high atomic weight via formed resistive mask, at that at first thick layer of X-ray resist is applied on working surface of bearing membrane or processed substrate, and then thin layer of either photo- or highly sensitive electronic resist, in the latter resistive mask is shaped and then masking coating with its help, which serves as stencil for performance of lithography by X-ray radiation of appropriate spectral range for creation of resistive mask in the layer of X-ray resist.

EFFECT: decrease of geometric deformations of topological X-ray absorbing pattern of lithographic mask.

10 dwg