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2 147 772

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C1

(51)

IPC

(21) (22)

Application

97109947/09, 1997-06-11

(24)

Start date

1997-06-11

(22)

Actual filing date

1997-06-11

(45)

Published

2000-04-20

(72)

Inventor

Murashev V.N.

(73)

Holder

Murashev Viktor Nikolaevich

DYNAMIC MEMORY CELL Russian patent published in 2000 - IPC

Abstract RU 2147772 C1

FIELD: electronic equipment, in particular, design of RAM and ROM memory units. SUBSTANCE: device has bipolar transistor, two resistors and capacitor. Goal of invention is achieved by asynchronous storage mode without clock signals. Device may be used in other digital logical gates. EFFECT: increased reliability of device operations, increased speed. 6 dwg

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RU 2 147 772 C1

Authors

Murashev V.N.

Dates

2000-04-20—Published

1997-06-11—Filed

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