DYNAMIC SERIAL FUNCTIONAL DEVICE Russian patent published in 2010 - IPC G11C11/401 G11C19/00 

Abstract RU 2392672 C2

FIELD: physics, computer engineering.

SUBSTANCE: invention relates to micro- and nanotechnology and can be used in designing dynamic memory, two-dimensional control matrices for liquid-crystal displays, high-speed and high-precision scanners, two-dimensional sensors, delay lines etc. The device uses a chain series-connected active functionally integrated cells which can control technologically compatible electric devices. Each cell of the chain is a simple electric circuit consisting of a MOS transistor, resistors and a capacitor. The time used is the delay time for switching off the MOS transistor relative the end of the output signal.

EFFECT: invention speeds up operation of the functional device, simplifies its manufacturing technology, reduces its size and improves its integration.

16 dwg

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RU 2 392 672 C2

Authors

Murashev Viktor Nikolaevich

Legotin Sergej Aleksandrovich

Dates

2010-06-20Published

2005-06-06Filed