FIELD: nuclear instrumentation and microelectronics. SUBSTANCE: two-emitter bipolar transistor which first emitter is connected to electrode parallel to coordinate axis X and which second emitter is connected to electrode parallel to coordinate axis Y is used in the capacity of detecting element of matrix in proposed detector. These electrodes are located on side of hitting of detector by particles and collector of transistor is connected to common supply electrode of detector. Composite bipolar transistor composed of single-emitter and two-emitter transistors in which emitter of single- emitter transistor is connected to base of two-emitter transistor and collectors of single- and two-emitter transistors are connected to common electrode of supply of detector can be used as detecting element of matrix. First emitter of two-emitter transistor is connected to electrode parallel to coordinate axis X and second emitter of same transistor is linked to electrode parallel to coordinate axis Y. Mentioned electrodes are located on side of hitting of detector by particles. Combination of diode and two-emitter bipolar transistor in which cathode of diode and collector of transistor are connected to common electrode of supply of detector and anode of diode is linked to base of transistor can be used as detecting element of matrix. In this case first emitter of transistor is connected to electrode parallel to coordinate axis X and second emitter of it is linked to electrode parallel to coordinate axis Y. Mentioned electrodes are located on side of hitting of detector by particles. EFFECT: enhanced speed of response, sensitivity and coordinate resolution of detector. 4 cl, 6 dwg
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Authors
Dates
1999-07-20—Published
1998-07-29—Filed