INTEGRATED MOS TRANSISTOR STRUCTURE Russian patent published in 2003 - IPC

FIELD: microelectronics. SUBSTANCE: integrated MOS transistor structure has semiconductor substrate of first polarity of conductivity covered with insulating layer with source and drain regions of first polarity of conductivity disposed thereon and separated by sub-gate region of second polarity of conductivity covered with sub-gate insulation layer that mounts gate; novelty is introduction of additional region of second polarity of conductivity abutting against drain region to form emitter of bipolar transistor whose base is mentioned drain region and collector, mentioned sub-gate region. EFFECT: enhanced speed, reduced surface area of integrated metal-oxide-silicon transistor structures. 1 cl, 3 dwg