METHOD OF PROCESSING MONOCRYSTALLINE EPITAXIAL LAYERS OF GROUP III NITRIDES Russian patent published in 2009 - IPC H01L21/263 

Abstract RU 2354000 C2

FIELD: chemistry.

SUBSTANCE: in method of processing monocrystalline epitaxial layers of group III nitrides by irradiation with fast neutrons with further heating, burning and cooling, exposed to irradiation are epitaxial layers with neutron flow density not higher than 1012 cm-2s-1, fluence F=(0.5÷5.0)·1016 cm-2; burning is carried out at 800-900°C during 20 minutes, heating is performed at rate 10-30 degrees/min, cooling to temperature 450-500°C is carried out at rate 5-10 degrees/min, and further at rate 20-40 degrees/min to room temperature.

EFFECT: improvement of electrical and physical characteristics of epitaxial layers.

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RU 2 354 000 C2

Authors

Kolin Nikolaj Georgievich

Merkurisov Denis Igorevich

Bojko Vladimir Mikhajlovich

Dates

2009-04-27Published

2006-11-17Filed