FIELD: chemistry.
SUBSTANCE: in method of processing monocrystalline epitaxial layers of group III nitrides by irradiation with fast neutrons with further heating, burning and cooling, exposed to irradiation are epitaxial layers with neutron flow density not higher than 1012 cm-2s-1, fluence F=(0.5÷5.0)·1016 cm-2; burning is carried out at 800-900°C during 20 minutes, heating is performed at rate 10-30 degrees/min, cooling to temperature 450-500°C is carried out at rate 5-10 degrees/min, and further at rate 20-40 degrees/min to room temperature.
EFFECT: improvement of electrical and physical characteristics of epitaxial layers.
2 tbl
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DOPING TECHNIQUE OF EPITAXIAL NITRIDE LAYERS OF GALLIUM BY GERMANIUM | 2006 |
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Authors
Dates
2009-04-27—Published
2006-11-17—Filed