METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH SUBMICRON SIZES OF CONTROLLING ELECTRODE Russian patent published in 1994 - IPC

FIELD: electronic engineering. SUBSTANCE: active region of the device is separated onto semi-insulating substrate. Ohmic contacts are formed, the first and the second masking layers are formed with a spaced relation between them. Path of controlling electrode is then electrochemically deposited onto active region of the device and onto semi-insulating substrate simultaneously. Before forming the first and the second masking layers the layer of dielectric is deposited, and windows for contact areas of the device are etched in it. Dielectric is etched i the space between masking layers before electrochemical deposition of metal path of controlling electrode. Mechanically non-reliable elements are excluded in the device that results to complete reliability of the operation. EFFECT: improved reliability of metal paths of controlling electrode; improved reproducibility of parameters of the devices. 2 cl, 3 dwg