METHOD FOR ANISOTROPIC ETCHING OF SILICON CRYSTALS Russian patent published in 1998 - IPC

FIELD: manufacturing of digital equipment and integral circuits, in particular, relief generation with given topology on structure surface, when grooves, recesses, mesa-structures, membranes and other three-dimensional topological elements are produced. SUBSTANCE: method involves generation of mask on working side of substrate, emission of helium ions with energy of at least 100 keV to idle side of substrate, exposition level is detected on working side of test sample by alternation of period of crystal lattice. When its level is independent from exposition, substrate is treated in anisotropic etching agent solution. EFFECT: increased functional capabilities. 1 tbl