FILM RESISTOR TRIMMING METHOD Russian patent published in 2000 - IPC

FIELD: microelectronics and electronic engineering; film resistor manufacture. SUBSTANCE: method involves exposure of resistive film to electric arc discharge; novelty is that process is conducted in dielectric liquid its layer thickness being 0.1 to 0.5 mm; air gap is provided between discharge electrode and mentioned layer. Kerosene, white alcohol, or deionized water may be used as dielectric liquid. Proposed method enables increasing trimming speed by two or three times and improving stability of trimmed resistors by one and a half to three times. It is suited to trimming both thin- and thick-film resistors. EFFECT: enlarged functional capabilities, reduced trimming time, improved stability of resistors. 5 dwg, 1 tbl