SEMICONDUCTOR GAS HUMIDITY SENSOR Russian patent published in 2001 - IPC

Abstract RU 2161794 C2

FIELD: gas analysis. SUBSTANCE: gas humidity sensor has semiconductor base with metal electrodes applied on its surface. Base is made of polycrystalline film of zinc selenide alloyed by gallium arsenide. EFFECT: higher sensitivity. 3 dwg

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RU 2 161 794 C2

Authors

Kirovskaja I.A.

Dates

2001-01-10Published

1999-03-24Filed