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(19)

(11)

2 464 552

(13)

(51)

IPC

G01N27/12(2006-01-01)

(21) (22)

Application

2011116012/28, 2011-04-22

(24)

Start date

2011-04-22

(22)

Actual filing date

2011-04-22

(45)

Published

2012-10-20

(72)

Inventor

Kirovskaja Iraida AlekseevnaBudanova Elena MikhajlovnaJur'Eva Alla Vladimirovna

(73)

Holder

Gosudarstvennoe Obrazovatel'Noe Uchrezhdenie Vysshego Professional'Nogo Obrazovanija Gosudarstvennyj Tekhnicheskij Universitet"

GAS SENSOR Russian patent published in 2012 - IPC G01N27/12

Abstract RU 2464552 C1

FIELD: physics.

SUBSTANCE: according to the invention, the gas sensor has a semiconductor base made from a polycrystalline zinc selenide film and a substrate, wherein the substrate is the electrode platform of a crystal resonator.

EFFECT: high sensitivity of the sensor and manufacturability thereof.

3 dwg

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RU 2 464 552 C1

Authors

Kirovskaja Iraida Alekseevna

Budanova Elena Mikhajlovna

Jur'Eva Alla Vladimirovna

Dates

2012-10-20—Published

2011-04-22—Filed