GAS HUMIDITY SENSOR Russian patent published in 2003 - IPC

Abstract RU 2212656 C1

FIELD: gas analysis, registration and measurement of content of water vapors. SUBSTANCE: semiconductor gas humidity sensor has semiconductor base with metal electrodes deposited on it. Base is made of monocrystalline plate of indium phosphide. EFFECT: raised sensitivity of sensor and its adaptability to manufacture. 2 dwg

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RU 2 212 656 C1

Authors

Kirovskaja I.A.

Dates

2003-09-20Published

2002-03-04Filed