SEMICONDUCTOR GAS ANALYSER Russian patent published in 2012 - IPC G01N27/12 

Abstract RU 2464553 C1

FIELD: physics.

SUBSTANCE: according to the invention, the gas sensor has a semiconductor base made from a polycrystalline film of zinc selenide doped with cadmium selenide, where the substrate is the electrode platform of a crystal resonator.

EFFECT: high sensitivity of the sensor and manufacturability thereof.

3 dwg

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RU 2 464 553 C1

Authors

Kirovskaja Iraida Alekseevna

Budanova Elena Mikhajlovna

Dates

2012-10-20Published

2011-05-10Filed