CVD METHOD AND DEVICE FOR PRODUCING CERMET DIAPHRAGMS Russian patent published in 2001 - IPC

FIELD: producing composite cermet diaphragms by chemical vapor deposition using organometallic compounds. SUBSTANCE: chemical vapor deposition (CVD) is conducted under following conditions to produce composite organometallic diaphragms with active molybdenum layer on external side of porous ceramic substrate: Mo(CO)₆ evaporation temperature - 60 to 70 C; substrate heating temperature - 400 C; gas-carrier-(N₂) flowrate - 60 l/h; deposition process time - minimum 6 h. Vertical-reactor unit including sublimation and deposition zones and midget electric heater for heating organometallic compound cup, adjustable evaporator cooling and heating system, and gas check valve is used for producing organometallic diaphragms. EFFECT: provision for minimal reduction of volumetric porosity of composite organometallic diaphragms. 2 cl, 3 dwg, 5 ex