METHOD AND DEVICE TO PRODUCE NANOSTRUCTURED TUNGSTEN LAYERS Russian patent published in 2013 - IPC C23C16/16 B82Y30/00 

FIELD: power engineering.

SUBSTANCE: method includes creation of the specified gas medium, heating of a substrate, supply of an organometallic compound to the substrate, its decomposition with generation of a layer of tungsten on the substrate and removal of decomposition products. The organometallic compound is supplied to the centre of the rotary substrate in the medium of assist gas, and direction of substrate rotation during formation of layers is varied. Supply, decomposition of the organometallic compound and removal of decomposition products is carried out cyclically. The device comprises a reactor with a tight vessel, an electric furnace and a substrate placed in the reactor, systems of creation and maintenance of the required gas medium coupled with the reactor, as well as the system of creation and maintenance of the specified pressure and the system of organometallic compound supply. The system of organometallic compound supply is placed oppositely to the substrate for its supply in the centre of the substrate and is equipped with a system of assist gas supply.

EFFECT: invention provides for production of tungsten layers with high extent of purity and thickness from hundreds of nanometers to dozens of microns with a homogeneous nanosize structure.

5 cl, 3 dwg, 1 tbl, 9 ex