UNIT FOR ION-BEAM PRODUCTION OF NANOSTRUCTURES ON THE SURFACE OF SEMICONDUCTOR PLATES Russian patent published in 2001 - IPC

FIELD: electronic and vacuum engineering. SUBSTANCE: unit has vacuum chamber with evacuation and annealing systems, device for feeding semiconductor plates to chamber, controlled-energy ion source, mass separator, electron detector, semiconductor plate holder, ion current meter, quadruple mass analyzer, and computer with monitor and interface. Axes of ion beam transport column, optical microscope, and electron gun are in same plane as that perpendicular to semiconductor plane in working position and they are intersecting at single point on front surface of plate. Optical microscope and electron gun are mounted on face side of plate and spaced apart through smallest angle. EFFECT: enhanced degree of integration of semiconductor devices and resolution of optical devices using proposed nanostructures. 3 cl, 1 dwg