METHOD FOR FORMING ORDERLY UNDULATING NANOSTRUCTURES (VARIANTS) Russian patent published in 2004 - IPC

FIELD: image-forming equipment engineering.

SUBSTANCE: method for forming orderly undulating nanostructure includes irradiation of GaAs by flow of ions of molecular nitrogen N+2

until forming a periodical undulating nanostructure on surface of GaAs with direction of crests of waves of nanostructure perpendicular to plane of fall of ions with following additional dispersion of GaAs by flow of ions of O+2, in bombardment plane, coinciding with plane of bombardment of N+2 ions. Energy and angle of bombardment by O+2 ions is set so that lengths of waves of formed undulating nanostructures are the same in case of single irradiation of GaAs by N+2 and O+2 ions. Second variant of method for forming orderly undulating nanostructure includes irradiation of silicon surface by flow of O+2, until forming of low-amplitude undulating nanostructure with following irradiation of surface of silicon by flow of N+2 ions in bombardment plane coinciding to same for O+2 ions, until saturating amplitude of undulating nanostructure. Energy and angle of ions bombardment is set so that in case of single irradiation by N+2 and O+2 ions of silicon lengths of waves of formed undulating nanostructures were identical. Third and fourth variants of method for forming orderly undulating nanostructure include prior polishing of surface of GaAs and silicon with following forming of undulating nanostructure.

EFFECT: better quality.

4 cl, 12 dwg